Guangdong, China
Business Type:
Manufacturer/Factory, Trading Company
Export Year:
OEM/ODM Availability:
OEM/ODM Service
Sample Available

Transistor, Mosfet, Electronic Component manufacturer / supplier in China, offering Transistor Irfu120npbf of Mosfet N-CH 100V 9.4A I-Pak, Qi Wireless Fast USB Charger Mobile Charger Cell Phone Charger, Integrated Circuit New and Original Ht1621b and so on.

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Transistor Irfu120npbf of Mosfet N-CH 100V 9.4A I-Pak

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Min. Order / Reference FOB Price
75 Pieces US $0.76/ Piece
Port: Zhuhai, China
Transport Package: 75PCS
Payment Terms: L/C, T/T, D/P, Paypal
Certification: RoHS
Shape: Ipak
Encapsulation Structure: Ipak
Part Status: Active
Fet Type: Mosfet N-Channel, Metal Oxide
Fet Feature: Standard

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Basic Info

Model NO.: IRFU120NPBF
Drain to Source Voltage (Vdss): 100V
Power - Max: 48W
Operating Temperature Range: -55 to 175 Degree C
Trademark: Infineon Technologies
HS Code: 85412100

Product Description

Lead time2 to 3 days after receiving the payment.
Remark100% New and original ; 30 days warranty
Payment  Heng Seng Bank (Hong Kong), Paypal,
ShipmentDHL ,TNT ,FEDEX, UPS or any other express

•Surface Mount (IRFR120N)
•Straight Lead (IRFU120N)
•Advanced Process Technology
•Fast Switching
•Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
Utilize advanced processing techniques to achieve the
Lowest possible on-resistance per silicon area. This
Benefit, combined with the fast switching speed and
Ruggedized device design that HEXFET Power MOSFETs
Are well known for, provides the designer with an extremely
Efficient device for use in a wide variety of applications.
The D-PAK is designed for a surface mounting using
Vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-hole
Mounting applications. Power dissipation levels up to 1.5
Watts are possible in typical surface mount applications.

Discrete Semiconductor Products


Transistors - FETs, MOSFETs - Single


Infineon Technologies

Packaging Tube  
Part StatusActive 
FET TypeMOSFET N-Channel, Metal Oxide 
FET FeatureStandard 
Drain to Source Voltage (Vdss)100V 
Current - Continuous Drain (Id) @ 25°C9.4A (Tc) 
Rds On (Max) @ Id, Vgs210 mOhm @ 5.6A, 10V 
Vgs(th) (Max) @ Id4V @ 250µA 
Gate Charge (Qg) @ Vgs25nC @ 10V 
Input Capacitance (Ciss) @ Vds330pF @ 25V 
Power - Max48W 
Operating Temperature-55°C ~ 175°C (TJ) 
Mounting TypeThrough Hole 
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA 
Supplier Device PackageIPAK (TO-251)

Transistor Irfu120npbf of Mosfet N-CH 100V 9.4A I-Pak

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