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Zhuhai Yukming Technology Co., Ltd.

Transistor, Mosfet, Electronic Component manufacturer / supplier in China, offering Transistor Irfu120npbf of Mosfet N-CH 100V 9.4A I-Pak, Auto Spare Part Right Blind Spot Car Camera, Auto Spare Part Truck Sensor Radar and Camera System and so on.

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Transistor Irfu120npbf of Mosfet N-CH 100V 9.4A I-Pak

FOB Price: US $0.76 / Piece
Min. Order: 75 Pieces
Min. Order FOB Price
75 Pieces US $0.76/ Piece
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Port: Zhuhai, China
Transport Package: 75PCS
Payment Terms: L/C, T/T, D/P, Paypal

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Basic Info
  • Model NO.: IRFU120NPBF
  • Shape: Ipak
  • Part Status: Active
  • Fet Feature: Standard
  • Power - Max: 48W
  • Trademark: Infineon Technologies
  • Certification: RoHS
  • Encapsulation Structure: Ipak
  • Fet Type: Mosfet N-Channel, Metal Oxide
  • Drain to Source Voltage (Vdss): 100V
  • Operating Temperature Range: -55 to 175 Degree C
  • HS Code: 85412100
Product Description
Lead time2 to 3 days after receiving the payment.
Remark100% New and original ; 30 days warranty
Payment  Heng Seng Bank (Hong Kong), Paypal,
ShipmentDHL ,TNT ,FEDEX, UPS or any other express

•Surface Mount (IRFR120N)
•Straight Lead (IRFU120N)
•Advanced Process Technology
•Fast Switching
•Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
Utilize advanced processing techniques to achieve the
Lowest possible on-resistance per silicon area. This
Benefit, combined with the fast switching speed and
Ruggedized device design that HEXFET Power MOSFETs
Are well known for, provides the designer with an extremely
Efficient device for use in a wide variety of applications.
The D-PAK is designed for a surface mounting using
Vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-hole
Mounting applications. Power dissipation levels up to 1.5
Watts are possible in typical surface mount applications.

Discrete Semiconductor Products


Transistors - FETs, MOSFETs - Single


Infineon Technologies

Packaging Tube  
Part StatusActive 
FET TypeMOSFET N-Channel, Metal Oxide 
FET FeatureStandard 
Drain to Source Voltage (Vdss)100V 
Current - Continuous Drain (Id) @ 25°C9.4A (Tc) 
Rds On (Max) @ Id, Vgs210 mOhm @ 5.6A, 10V 
Vgs(th) (Max) @ Id4V @ 250µA 
Gate Charge (Qg) @ Vgs25nC @ 10V 
Input Capacitance (Ciss) @ Vds330pF @ 25V 
Power - Max48W 
Operating Temperature-55°C ~ 175°C (TJ) 
Mounting TypeThrough Hole 
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA 
Supplier Device PackageIPAK (TO-251)

Transistor Irfu120npbf of Mosfet N-CH 100V 9.4A I-Pak
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Ms. Yuan Yue
Foreign Trade Manager
To: Ms. Yuan Yue

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